Characterization techniques for temperature-dependent experimental analysis of microwave transistors

被引：6

作者：

Caddemi, A ^{[1
]}

Donato, N ^{[1
]}

机构：

[1] Univ Messina, Dipartimento Dis Mat & Tecnol Fis Avanzate, Messina, Italy

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 2003年 / 52卷 / 01期

关键词：

microwave measurements; on-wafer system; temperature; transistor characterization;

D O I：

10.1109/TIM.2003.809079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Our recent research work has been focused upon the effects of temperature on the dc behavior, the small signal performance, and the noise properties of advanced transistors up to microwave frequencies. Several devices have been investigated by means of different experimental systems down to cryogenic levels (50 K). We here present the most interesting results of such ex. tensive investigation, together with the details of the experimental procedures followed. The on-wafer cooling setup was designed and realized in our laboratory. It exhibited a very good performance characterized by either a tight temperature control or a fast settling time over the 220-320 K temperature range. By this temperature-dependent analysis, interesting features of GaAs- and In-GaAs-HEMTs are shown and hereby discussed.

引用

页码：85 / 91

页数：7

共 8 条

[1] TEMPERATURE-DEPENDENT NOISY MODELS OF PSEUDOMORPHIC HEMTS [J].