Effect of gas ambient on improvement in emission behavior of Si field emitter arrays

被引：7

作者：

Takai, M ^{[1
]}

Morimoto, H

Hosono, A

Kawabuchi, S

机构：

[1] Osaka Univ, Res Ctr Mat Sci Extreme Condit, Toyonaka, Osaka 560, Japan

[2] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 560, Japan

[3] Mitsubishi Elect Co, Adv Technol R&D Ctr, Amagasaki, Hyogo 661, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期

关键词：

D O I：

10.1116/1.589908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gated Si field emitter arrays (FEAs) have been operated in various gas atmospheres such as air, H-2, O-2, and Ar at 10(-7) Torr to improve the emission behavior. The electron emission from the FEAs was enhanced by a factor of up to 10 during or after gas ambient emission with H-2, O-2, and Ar, while the improvement was not observed by a process with air. Fowler-Nordheim plots indicated a drastic change in slope only for H-2 processes, in which hydrogen atoms would adsorb to Si tip surfaces. An emission pattern with a fourfold symmetry was observed for a single-tip emitter after hydrogen ambient emission, indicating the tip surface crystallinity after gas ambient emission. (C) 1998 American Vacuum Society. [S0734-211X(98)03302-2].

引用

页码：799 / 802

页数：4

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