Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded in gate oxide

被引：54

作者：

Guan, Weihua ^{[1
]}

Long, Shibing ^{[1
]}

Liu, Ming ^{[1
]}

Li, Zhigang ^{[1
]}

Hu, Yuan ^{[1
]}

Liu, Qi ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 09期

关键词：

D O I：

10.1088/0022-3727/40/9/012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-oxide-semiconductor capacitor structure with metal nanocrystals embedded in the gate oxide for the application of nonvolatile memory ( NVM) is fabricated. Optimal process parameters are investigated and Au nanocrystals are adopted in this paper. High-frequency capacitance versus voltage ( C-V) and conductance versus voltage ( G-V) measurements demonstrate the memory effect of the structure which is shown to originate from the confined states of metal nanocrystals. Capacitance versus time ( C-t) measurement under a constant gate bias is executed to evaluate the retention performance and an exponential decaying trend is observed and discussed. It is found that with respect to semiconductor counterparts, Au nanocrystals can provide enhanced retention performance, which confirms the high capacity of Au nanocrystals for NVM applications.

引用

页码：2754 / 2758

页数：5

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