Investigation of charging phenomena in silicon nanocrystal metal-oxide-semiconductor capacitors using ramp current-voltage measurements

被引：33

作者：

Ioannou-Sougleridis, V ^{[1
]}

Nassiopoulou, AG ^{[1
]}

机构：

[1] NCSR Demokritos, IMEL, Athens 15310, Greece

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 06期

关键词：

D O I：

10.1063/1.1604459

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-voltage (I-V) measurements with different ramp rates were used to investigate charge trapping phenomena in silicon nanocrystal metal-oxide-semiconductor capacitors, fabricated by low-pressure chemical vapor deposition of very thin silicon layers on a tunneling silicon oxide and subsequent high-temperature thermal oxidation. The nanocrystal size was in the range of 1-2 nm. Capacitance-voltage curves deduced from the ramp I-V measurements showed an N-shaped peak after a threshold voltage, from which the charge trapped in the structure was calculated. (C) 2003 American Institute of Physics.

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页码：4084 / 4087

页数：4

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