Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers

被引：11

作者：

Chae, KH

Son, JH

Chang, GS

Kim, HB

Jeong, JY

Im, S

Song, JH

Kim, KJ

Kim, HK

Whang, CN ^{[1
]}

机构：

[1] Yonsei Univ, Atom Scale Surface Sci Res Ctr, Seoul 120749, South Korea

[2] Yonsei Univ, Dept Phys, Seoul 120749, South Korea

[3] Yonsei Univ, Dept Met Engn, Seoul 120749, South Korea

[4] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 130650, South Korea

[5] Korea Res Inst Stand & Sci, Surface Anal Grp, Taejon 305600, South Korea

来源：

NANOSTRUCTURED MATERIALS | 1999年 / 11卷 / 08期

关键词：

D O I：

10.1016/S0965-9773(99)00414-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing. (C) 2000 Acta Metallurgica Inc.

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页码：1239 / 1243

页数：5

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