Application of monolithic strip line radiation detector based on semi-insulating GaAs in X-ray portable scanner

被引:5
作者
Dubecky, F
Scepko, P
Loukas, D
Zatko, B
Sekerka, V
Necas, V
Perdochová, A
Sekácová, M
Bohácek, P
Hudec, M
Huran, J
机构
[1] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia
[2] T&N Syst Ltd, SK-97401 Banska Bystrica, Slovakia
[3] NCSR Demokritos, Inst Nucl Phys, GR-15310 Athens, Greece
[4] Slovak Univ Technol Bratislava, Dept Nucl Phys & Technol, SK-81219 Bratislava, Slovakia
关键词
semiconductor; semi-insulating; GaAs; radiation detector; X- and gamma-ray detection;
D O I
10.1016/j.nima.2004.06.022
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 [仪器科学与技术]; 080401 [精密仪器及机械]; 081102 [检测技术与自动化装置];
摘要
The Schottky barrier line-scanning X- and gamma-ray detector is presented, based on bulk undoped semi-insulating (SI) GaAs suitable for radiography imaging with a high position resolution (the lowest pitch 0.125 mm). Basic electrical and detection characteristics of the detector (I-V dependences, pulse height spectra of Am-241 gamma source) together with evaluated parameters are demonstrated. The detector is irradiated from the edge with an estimated active area of the strip input cross-section (0.125-0.25) x 0.25 mm(2) and absorption length 1.25 or 2.5 mm. A photon-counting readout electronics with 480 channels has been developed, giving a total length of the scanner line of about 12 cm, using detectors with pitch 0.25 mm. The readout system is based on a 16 channel VLSI chip or on 24 channel modules produced with discrete components in SMD technology. Overall detection efficiency of the developed strip SI GaAs radiation detector reaches a value higher than 50% of the theoretical one (similar to 75%) for detection of 60 keV photons. The status of the development of a modular portable X-ray scanner based on the developed detectors is also presented. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:314 / 320
页数:7
相关论文
共 18 条
[1]
Ayzenshtat AI, 2002, 2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, P35
[2]
GaAs resistor structures for X-ray imaging detectors [J].
Ayzenshtat, GI ;
Budnitsky, DL ;
Koretskaya, OB ;
Novikov, VA ;
Okaevich, LS ;
Potapov, AI ;
Tolbanov, OP ;
Tyazhev, AV ;
Vorobiev, AP .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2002, 487 (1-2) :96-101
[3]
Influence of substrate on the performances of semi-insulating GaAs detectors [J].
Baldini, R ;
Vanni, P ;
Nava, F ;
Canali, C ;
Lanzieri, C .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2000, 449 (1-2) :268-276
[4]
Spectroscopic performance of semi-insulating GaAs detectors for digital radiography [J].
Bertolucci, E ;
Conti, M ;
Mettivier, G ;
Russo, P ;
Cola, A ;
Quaranta, F ;
Vasanelli, L ;
Bisogni, MG ;
Bottigli, U ;
Fantacci, ME ;
Stefanini, A .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 422 (1-3) :247-251
[5]
Detection performance of SIGaAs detectors for nuclear medicine [J].
Bertolucci, E ;
Bisogni, MG ;
Bottigli, U ;
Conti, M ;
Cola, A ;
Fantacci, ME ;
Maestro, P ;
Mettivier, G ;
Quaranta, F ;
Rosso, V ;
Russo, P ;
Stefanini, A ;
Vasanelli, L .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 460 (01) :123-126
[6]
Integration of front-end electronics with GaAs pixel detectors: Experimental and feasibility analysis [J].
Bertuccio, G ;
Canali, C ;
De Geronimo, G ;
Lanzieri, C ;
Longoni, A ;
Nava, F .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (04) :1209-1214
[7]
Performance of SI LEC GaAs detectors at 20 degrees C and -30 degrees C for X- and gamma-ray spectroscopy [J].
Bertuccio, G ;
Alietti, M ;
Canali, C ;
Cetronio, A ;
Chiossi, C ;
Nava, F .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 379 (01) :152-154
[8]
Reverse current in SI GaAs pixel detectors [J].
Cola, A .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1998, 410 (01) :85-91
[9]
1ST RESULTS FROM GAAS DOUBLE-SIDED DETECTORS [J].
BEAUMONT, SP ;
BERTIN, R ;
BOOTH, CN ;
BUTTAR, C ;
CARRARESI, L ;
CINDOLO, F ;
COLOCCI, M ;
COMBLEY, FH ;
DAURIA, S ;
DELPAPA, C ;
DOGRU, M ;
EDWARDS, M ;
FOSTER, F ;
FRANCESCATO, A ;
GOWDY, S ;
GRAY, R ;
HILL, G ;
HOU, Y ;
HOUSTON, P ;
HUGHES, G ;
JONES, BK ;
LYNCH, JG ;
LISOWSKI, B ;
MATHESON, J ;
NAVA, F ;
NUTI, M ;
OSHEA, V ;
PELFER, PG ;
RAINE, C ;
SANTANA, J ;
SAUNDERS, IJ ;
SELLER, PH ;
SHANKAR, K ;
HSARP, PH ;
SKILLICORN, IO ;
SLOAN, T ;
SMITH, KM ;
TENHAVE, I ;
TURNBULL, RM ;
VANNI, U ;
ZICHICHI, A .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1994, 348 (2-3) :514-517
[10]
X- and gamma-ray detectors based on bulk semi-insulating GaAs & InP:: Present status and prospects [J].
Dubecky, F ;
Darmo, J ;
Zat'ko, B ;
Fornari, R ;
Necas, V ;
Krempasky, M ;
Pelfer, PG ;
Sekácová, M ;
Bohácek, P .
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, 2000, :151-158