Oxygen incorporation in thin films of In2O3:Sn prepared by radio frequency sputtering

被引：51

作者：

Mergel, D ^{[1
]}

Stass, W ^{[1
]}

Ehl, G ^{[1
]}

Barthel, D ^{[1
]}

机构：

[1] Univ Essen Gesamthsch, Dept Phys, WG Thin Film Technol, D-45117 Essen, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 05期

关键词：

D O I：

10.1063/1.1287603

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline In2O3:Sn (ITO) films have been prepared by reactive radio frequency diode sputtering of an oxidic target using various oxygen/argon mixtures. They mostly contain more oxygen than the ideal crystal. When deposited at low pressure, the crystals have an expanded lattice (up to 3.5%) and, for small oxygen addition to the sputter gas, are also denser than the ideal crystal. This is explained by an incorporation of additional oxygen in the bixbyite structure, possibly into constitutional vacancies. Upon annealing, the lattice relaxes, however, the additional oxygen remains in the films. A model of oxygen segregation into grain boundaries is developed, that could also explain the grain-subgrain structure sometimes reported for ITO films. (C) 2000 American Institute of Physics. [S0021-8979(00)07217-0].

引用

页码：2437 / 2442

页数：6

共 29 条

[1]

*ASTM, 6416 ASTM JCPDSICDD

[2] STUDY OF BLACKENING EFFECTS OF INDIUM-TIN OXIDE BY DEPOSITING SPUTTERED TA2O5 [J].

CHUBACHI, Y ;

AOYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (07) :1442-1446

[3]

Evans H, 1995, CRC HDB CHEM PHYSICS, P12

[4] EFFECT OF O2 PRESSURE DURING DEPOSITION ON PROPERTIES OF RF-SPUTTERED SN-DOPED IN2O3 FILMS [J].

FAN, JCC ;

BACHNER, FJ ;

FOLEY, GH .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :773-775

[5] X-RAY AND OPTICAL MEASUREMENTS IN THE IN2O3-SNO2 SYSTEM [J].

FRANK, G ;

KOSTLIN, H ;

RABENAU, A .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 52 (01) :231-238

[6] ELECTRICAL-PROPERTIES AND DEFECT MODEL OF TIN-DOPED INDIUM OXIDE LAYERS [J].

FRANK, G ;

KOSTLIN, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (04) :197-206

[7] Formation of c-BN thin films under reduced ion impact [J].

Hahn, J ;

Richter, F ;

Pintaske, R ;

Roder, M ;

Schneider, E ;

Welzel, T .

SURFACE & COATINGS TECHNOLOGY, 1997, 92 (1-2) :129-134

[8]

HAMMOND CR, 1995, CRC HDB CHEM PHYSICS, P4

[9] MICROGRAIN STRUCTURE INFLUENCE ON ELECTRICAL CHARACTERISTICS OF SPUTTERED INDIUM TIN OXIDE-FILMS [J].

HIGUCHI, M ;

UEKUSA, S ;

NAKANO, R ;

YOKOGAWA, K .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (11) :6710-6713

[10] MICROSTRUCTURE AND ETCHING PROPERTIES OF SPUTTERED INDIUM TIN OXIDE (ITO) [J].

HOHEISEL, M ;

MITWALSKY, A ;

MROTZEK, C .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 123 (02) :461-472

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