All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip

被引：81

作者：

Tanabe, Takasumi ^{[1
,2
]}

Sumikura, Hisashi ^{[1
]}

Taniyama, Hideaki ^{[1
,2
]}

Shinya, Akihiko ^{[1
,2
]}

Notomi, Masaya ^{[1
,2
]}

机构：

[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] CREST JST, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 10期

关键词：

PHOTONIC-CRYSTAL NANOCAVITIES; INSULATOR WAVE-GUIDES; PHOTODIODES; BANDWIDTH; POWER;

D O I：

10.1063/1.3357427

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate channel selective 0.1-Gb/s photoreceiver operation at telecom wavelength using a silicon high-Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteristics are investigated in detail, in which we found that the photocurrent is enhanced of more than 10(5) due to the ultrahigh-Q (Q similar or equal to 10(5)). With the help of two-photon absorption, which is visible at a surprisingly low input power of 10(-8) W, the quantum efficiency of this device reaches similar to 10%. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3357427]

引用

页数：3

共 18 条

[1] Ultrafast photodetection in an all-silicon chip enabled by two-photon absorption [J].

Bravo-Abad, J. ;

Ippen, E. P. ;

Soljacic, M. .

APPLIED PHYSICS LETTERS, 2009, 94 (24)

[2] Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor [J].

Fujiwara, Akira ;

Nishiguchi, Katsuhiko ;

Ono, Yukinori .

APPLIED PHYSICS LETTERS, 2008, 92 (04)

[3] Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response [J].

Geis, M. W. ;

Spector, S. J. ;

Grein, M. E. ;

Yoon, J. U. ;

Lennon, D. M. ;

Lyszczarz, T. M. .

OPTICS EXPRESS, 2009, 17 (07) :5193-5204

[4] Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product [J].

Kang, Yimin ;

Liu, Han-Din ;

Morse, Mike ;

Paniccia, Mario J. ;

Zadka, Moshe ;

Litski, Stas ;

Sarid, Gadi ;

Pauchard, Alexandre ;

Kuo, Ying-Hao ;

Chen, Hui-Wen ;

Zaoui, Wissem Sfar ;

Bowers, John E. ;

Beling, Andreas ;

McIntosh, Dion C. ;

Zheng, Xiaoguang ;

Campbell, Joe C. .

NATURE PHOTONICS, 2009, 3 (01) :59-63

[5] Silicon waveguide two-photon absorption detector at 1.5 μm wavelength for autocorrelation measurements [J].

Liang, TK ;

Tsang, HK ;

Day, IE ;

Drake, J ;

Knights, AP ;

Asghari, M .

APPLIED PHYSICS LETTERS, 2002, 81 (07) :1323-1325

[6] In-line channel power monitor based on helium ion implantation in silicon-on-insulator waveguides [J].

Liu, Y. ;

Chow, C. W. ;

Cheung, W. Y. ;

Tsang, H. K. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (17-20) :1882-1884

[7] All-optical phase modulations in a silicon wire waveguide at ultralow light levels [J].

Matsuda, Nobuyuki ;

Shimizu, Ryosuke ;

Mitsumori, Yasuyoshi ;

Kosaka, Hideo ;

Sato, Aya ;

Yokoyama, Hiroyuki ;

Yamada, Koji ;

Watanabe, Toshifumi ;

Tsuchizawa, Tai ;

Fukuda, Hiroshi ;

Itabashi, Seiichi ;

Edamatsu, Keiichi .

APPLIED PHYSICS LETTERS, 2009, 95 (17)

[8] Device Requirements for Optical Interconnects to Silicon Chips [J].

Miller, David A. B. .

PROCEEDINGS OF THE IEEE, 2009, 97 (07) :1166-1185

[9] Spontaneous-emission control by photonic crystals and nanocavities [J].

Noda, Susumu ;

Fujita, Masayuki ;

Asano, Takashi .

NATURE PHOTONICS, 2007, 1 (08) :449-458

[10] Nonlinear and adiabatic control of high-Q photonic crystal nanocavities [J].

Notomi, M. ;

Tanabe, T. ;

Shinya, A. ;

Kuramochi, E. ;

Taniyama, H. ;

Mitsugi, S. ;

Morita, M. .

OPTICS EXPRESS, 2007, 15 (26) :17458-17481

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