Room temperature two-terminal characteristics in silicon nanowires

被引：15

作者：

Hu, SF

Wong, WZ

Liu, SS

Wu, YC

Sung, CL

Huang, TY

机构：

[1] Natl Nano Device Labs, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

SOLID STATE COMMUNICATIONS | 2003年 / 125卷 / 06期

关键词：

nanostructures; nanofabrications; tunnelling;

D O I：

10.1016/S0038-1098(02)00807-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured, on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade. (C) 2003 Elsevier Science Ltd. All rights reserved

引用

收藏

页码：351 / 354

页数：4

相关论文

共 12 条

[1] COULOMB-BLOCKADE IN A SILICON TUNNEL JUNCTION DEVICE [J].

ALI, D ;

AHMED, H .

APPLIED PHYSICS LETTERS, 1994, 64 (16) :2119-2120

[2]

FERRY D, 1999, TRANSPORT NANOSTRUCT

[3]

GRABERT H, 1992, SINGLE ELECT TUNNELI

[4] Arsenic redistribution at the SiO2/Si interface during oxidation of implanted silicon [J].

Iacona, F ;

Raineri, V ;

La Via, F ;

Terrasi, A ;

Rimini, E .

PHYSICAL REVIEW B, 1998, 58 (16) :10990-10999

[5] Coulomb blockade effects in a highly doped silicon quantum wire fabricated on novel molecular beam epitaxy grown material [J].

Koester, T ;

Goldschmidtboeing, F ;

Hadam, B ;

Stein, J ;

Altmeyer, S ;

Spangenberg, B ;

Kurz, H ;

Neumann, R ;

Brunner, K ;

Abstreiter, G .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (1B) :465-468

[6] Room temperature operated single electron transistor fabricated by electron beam nanolithography [J].

Kurihara, K ;

Namatsu, H ;

Nagase, M ;

Makino, T .

MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) :261-264

[7] Room temperature operation of Si single-electron memory with self-aligned floating dot gate [J].

Nakajima, A ;

Futatsugi, T ;

Kosemura, K ;

Fukano, T ;

Yokoyama, N .

APPLIED PHYSICS LETTERS, 1997, 70 (13) :1742-1744

[8] Effect of wire length on Coulomb blockade in ultrathin wires of recrystallized hydrogenated amorphous silicon [J].

Ng, V ;

Ahmed, H ;

Shimada, T .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) :6931-6939

[9] Oxidation properties of silicon dots on silicon oxide investigated using energy filtering transmission electron microscopy [J].

Single, C ;

Zhou, F ;

Heidemeyer, H ;

Prins, FE ;

Kern, DP ;

Plies, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3938-3942

[10]

TIIKE AT, 2001, PROG QUANT ELECTRON, V25, P97