Electron Transport in Graphene From a Diffusion-Drift Perspective

被引：58

作者：

Ancona, Mario G. ^{[1
]}

机构：

[1] USN, Res Lab, Elect Sci & Engn Div, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 03期

关键词：

Diffusion drift (DD); field-effect transistors; graphene; multilayer; FIELD-EFFECT TRANSISTORS; EPITAXIAL GRAPHENE; MOBILITY; BANDGAP;

D O I：

10.1109/TED.2009.2038644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

A diffusion-drift treatment of electron and hole transport in macroscopic graphene is presented. The various material response functions that enter the theory are outlined and, to the extent possible, specified and calibrated. For purposes of illustration, the theory is applied to a variety of situations involving field-effect devices that are of potential technological interest. Both single and multilayer graphene are discussed, as is the effect of the small bandgaps that have been reported for graphene on SiC.

引用

页码：681 / 689

页数：9

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