A NEW ANALYTICAL DIODE MODEL INCLUDING TUNNELING AND AVALANCHE BREAKDOWN

被引:157
作者
HURKX, GAM
DEGRAAFF, HC
KLOOSTERMAN, WJ
KNUVERS, MPG
机构
[1] Philips Research Laboratories
关键词
D O I
10.1109/16.155882
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new analytical model describing reverse and forward dc diode characteristics is presented. It serves as a basis for a compact model for circuit simulation purposes. The model is based on the solution of the hole continuity equation in the depletion layer of a p-n junction and incorporates the following physical mechanisms: band-to-band tunneling, trap-assisted tunneling (both under forward and reverse bias), Shockley-Read-Hall recombination, and avalanche breakdown. It contains seven parameters which can be determined at one temperature. No additional parameters are needed to describe the temperature dependence. From comparisons with both numerical simulations and measurements it is found that the model gives an adequate description of the dc characteristics in both forward and reverse modes.
引用
收藏
页码:2090 / 2098
页数:9
相关论文
共 19 条
[1]  
BULUCEA CD, 1973, IEEE T ELECTRON DEV, VED20, P692, DOI 10.1109/T-ED.1973.17730
[2]   THEORETICAL INVESTIGATION ON GENERATION CURRENT IN SILICON P-N-JUNCTIONS UNDER REVERSE BIAS [J].
CALZOLARI, PU ;
GRAFFI, S .
SOLID-STATE ELECTRONICS, 1972, 15 (09) :1003-+
[3]   IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J].
CHYNOWETH, AG .
PHYSICAL REVIEW, 1958, 109 (05) :1537-1540
[4]   FORWARD-BIAS TUNNELING - A LIMITATION TO BIPOLAR DEVICE SCALING [J].
DELALAMO, JA ;
SWANSON, RM .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) :629-631
[5]  
GROEBNER W, 1961, INTEGRALTAFEL, P162
[6]   INHERENT AND STRESS-INDUCED LEAKAGE IN HEAVILY DOPED SILICON JUNCTIONS [J].
HACKBARTH, E ;
TANG, DD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2108-2118
[8]  
Hurkx G. A. M., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P307, DOI 10.1109/IEDM.1989.74285
[9]   ON THE MODELING OF TUNNELLING CURRENTS IN REVERSE-BIASED P-N-JUNCTIONS [J].
HURKX, GAM .
SOLID-STATE ELECTRONICS, 1989, 32 (08) :665-668
[10]   A NEW RECOMBINATION MODEL FOR DEVICE SIMULATION INCLUDING TUNNELING [J].
HURKX, GAM ;
KLAASSEN, DBM ;
KNUVERS, MPG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (02) :331-338