High-resolution potential mapping in semiconductor nanostructures by cross-sectional scanning tunneling microscopy and spectroscopy

被引：13

作者：

Modesti, S

Furlanetto, D

Piccin, M

Rubini, S

Franciosi, A

机构：

[1] INFM, Lab Nazl TASC, I-34012 Trieste, Italy

[2] Univ Trieste, Dipartimento Fis, I-34127 Trieste, Italy

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 12期

关键词：

D O I：

10.1063/1.1563310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a combination of scanning tunneling microscopy and spectroscopy techniques, and a series of periodic delta-doped structures in GaAs, we show that the electrostatic potential can be mapped along {110} cross sections in semiconductor nanostructures with nanometer resolution and 30 meV sensitivity. Our results also indicate that microscopic capacitors with plates spaced by as little as 2 nm can be implemented by delta doping for band gap engineering purposes. (C) 2003 American Institute of Physics.

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收藏

页码：1932 / 1934

页数：3

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