Microstructure and preferred orientation in rf sputter deposited AlN thin film

Aluminum nitride (AlN) thin films were prepared by reactive magnetron sputter deposition. The microstructure and crystallographic orientation of the thin films were examined by varying sputtering conditions, such as deposition time, target-to-substrate distance and substrate temperature. The deposited films were investigated using an X-ray diffractometer with monochromatized Cu Kα radiation. Scanning electron microscopy was also performed to observe surface and cross-sectional morphology and film thickness.