PREPARATION OF ORIENTATED ALUMINUM NITRIDE FILMS BY RADIOFREQUENCY REACTIVE SPUTTERING

被引：13

作者：

SUGIYAMA, K

TANIGUCHI, K

KUWABARA, K

机构：

[1] Department of Applied Chemistry, Faculty of Engineering, Nagoya University, Nagoya, 464, Furo-cho, Chikusa-ku

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1990年 / 9卷 / 04期

关键词：

D O I：

10.1007/BF00721039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：489 / 492

页数：4

共 9 条

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BENSALEM, R ;

ABID, A ;

SEALY, BJ .

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[2] REACTIVELY SPUTTERED AIN FILMS FOR GAAS ANNEALING CAPS [J].

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SURRIDGE, R ;

WESTWOOD, WD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :989-992

[3]

FATHIMULLA A, 1983, J APPL PHYS, V54, P4586, DOI 10.1063/1.332661

[4]

IWASI N, 1986, SOLID STATE TECH OCT, P135

[5] ALN THIN-FILMS WITH CONTROLLED CRYSTALLOGRAPHIC ORIENTATIONS AND THEIR MICROSTRUCTURE [J].

OHUCHI, FS ;

RUSSELL, PE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1630-1634

[6]

Shinoki F., 1973, Oyo Buturi, V42, P882

[7] THE MICROSTRUCTURE OF SPUTTER-DEPOSITED COATINGS [J].

THORNTON, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06) :3059-3065

[8]

YONEYA K, 1981, J CERAM SCO JPN, V89, P330

[9] REACTIVE MOLECULAR-BEAM EPITAXY OF ALUMINUM NITRIDE [J].

YOSHIDA, S ;

MISAWA, S ;

FUJII, Y ;

TAKADA, S ;

HAYAKAWA, H ;

GONDA, S ;

ITOH, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04) :990-993

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