Influence of hydrodynamic models on the prediction of submicrometer device characteristics

被引：17

作者：

Ieong, MK ^{[1
]}

Tang, TW ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,DEPT ELECT & COMP ENGN,AMHERST,MA 01003

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/16.644644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of different hydrodynamic models on the prediction of submicron de,ice characteristics is studied using the General Hydrodynamic Equation solver. We analyze the simulation results of various structures of Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFET's) and silicon germanium (SiGe) Heterostructure Bipolar Transistors (HBT's). When the size of devices is reduced to the submicron regime, the current drive of a SOI-MOSFET is enhanced mainly by the nonlocal effect. However, the current drive of a HBT is reduced by the dominant thermal back-diffusion effect. The sensitivity of predicted device characteristics on various transport parameters is also discussed.

引用

页码：2242 / 2251

页数：10

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