Anodic oxidation of GaInP2

被引：4

作者：

Khaselev, O ^{[1
]}

Turner, JA ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

CORROSION SCIENCE | 2000年 / 42卷 / 10期

关键词：

oxidation; GaInP2; anodic films;

D O I：

10.1016/S0010-938X(00)00016-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Anodic films have been grown on GaInP2 at a constant applied current density in phosphate solutions with pH 4, 7 and 10. XPS analysis revealed that the chemical composition of the anodic films formed in the solutions with pH 7 and 10 is non-uniform with In excess and corresponding Ga and P deficiency in outer layer. The anodic films formed in the solution with pH 4 had uniform composition, apparently due to preferential dissolution of In in this solution. The anodic films were stable when exposed to air for several weeks. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：1831 / 1838

页数：8

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