Relaxation enhancement of SiGe thin layers by ion implantation into Si substrates

被引：12

作者：

Sawano, K

Hirose, Y

Koh, S

Nakagawa, K

Hattori, T

Shiraki, Y

机构：

[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[2] Musashi Inst Technol, Setagaya Ku, Tokyo 158, Japan

[3] Yamanashi Univ, Ctr Crystal Sci & Technol, Kofu, Yamanashi, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

strain relaxation; ion implantation; molecular beam epitaxy; SiGe;

D O I：

10.1016/S0022-0248(02)02287-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Extremely thin SiGe buffer layers with almost full strain relaxation were obtained by Ar ion implantation into Si substrates before SiGe growth. The amount of strain relaxation was found to depend on ion dose and implantation energy, indicating that ion-implantation-induced defects play an important role in strain relaxation. The existence of a tensilely strained Si layer, observed by Raman spectroscopy, implies that the ion-implanted Si substrate has a compliant effect for SiGe buffer layer growth. (C) 2002 Elsevier Science B.V. All rights reserved.

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收藏

页码：685 / 688

页数：4

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