ENHANCED STRAIN RELAXATION IN SI/GEXSI1-X/SI HETEROSTRUCTURES VIA POINT-DEFECT CONCENTRATIONS INTRODUCED BY ION-IMPLANTATION

被引：61

作者：

HULL, R

BEAN, JC

BONAR, JM

HIGASHI, GS

SHORT, KT

TEMKIN, H

WHITE, AE

机构：

[1] AT and T Bell Laboratories, Murray Hill, NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 24期

关键词：

D O I：

10.1063/1.102904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that strain relaxation during annealing of Si/Ge xSi1-x/Si heterostructures is significantly enhanced if the strained GexSi1-x layers are implanted with p (B) or n (As) type dopants below the amorphization dose. Comparison of strain relaxation during in situ annealing studies in a transmission electron microscope between unimplanted and implanted structures reveals that the latter show residual strains substantialy below those for unimplanted structures. We propose that this enhanced relaxation is caused by increased dislocation nucleation probabilities due to the high point-defect concentrations arising from implantation.

引用

页码：2445 / 2447

页数：3

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