Fast and slow charge trapping/detrapping processes in high-k nMOSFETs

被引：13

作者：

Heh, Dawei ^{[1
]}

Choi, Rino ^{[1
]}

Young, Chadwin D. ^{[1
]}

Bersuker, Gennadi ^{[1
]}

机构：

[1] SEMATECH, 2706 Montopolis Dr, Austin, TX 78741 USA

来源：

2006 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP, FINAL REPORT | 2006年

关键词：

D O I：

10.1109/IRWS.2006.305224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single pulse technique with a wide range of pulse times has been applied to study trap charging and discharging mechanisms in nMOSFET high-k devices. It is shown that both charging and discharging are controlled by two distinctive processes with different characteristic times. A proposed characterization methodology, which separates the relaxation effects associated with the fast transient charging/discharging processes, allows extracting the intrinsic dependence of threshold voltage on stress time.

引用

页码：120 / +

页数：2

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