Mechanism of negative bias temperature instability in CMOS devices: Degradation, recovery and impact of nitrogen

被引：71

作者：

Mahapatra, S ^{[1
]}

Alam, MA ^{[1
]}

Kumar, PB ^{[1
]}

Dalei, TR ^{[1
]}

Saha, D ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

NBTI mechanism is discussed for a wide range of stress conditions. Conditions for interface and bulk-trap generation are shown. The bias, time and temperature dependence of interface-trap buildup and recovery are discussed using the framework of the R-D model. The AC frequency dependence and impact of gate oxide nitridation are also discussed.

引用

页码：105 / 108

页数：4

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