GaSb-, lnGaAsSb-, lnGaSb-, lnAsSbP- and Ge-TPV cells with diffused emitters

被引：21

作者：

Sulima, OV ^{[1
]}

Bett, AW ^{[1
]}

Dutta, PS ^{[1
]}

Mauk, MG ^{[1
]}

Mueller, RL ^{[1
]}

机构：

[1] Astropower Inc, Newark, DE 19716 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190723

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

GaSb thermophotovoltaic (TPV) cells are believed to be the most suitable choice for modem TPV generators, both in terms of efficiency and simplicity of the diffusion technology used. However, TPV cells with bandgaps (E-g) lower than GaSb are expected to be advantageous for low-temperature (< 1000degreesC) non-wavelength-selective TPV radiators because they provide more effective absorption of the blackbody infrared radiation. In this work, together with GaSb (E-g = 0.72 eV), semiconductors with a lower E-g - Ge (E-g = 0.66 eV), InGaSb (E-g = 0.60 eV), InGaAsSb (E-g = 0.55 eV) and InAsSbP (E-g = 0.39 eV) - were studied for TPV cells. InGaAsSb cells seem to be the most promising candidate to replace GaSb cells in the low-temperature TPV generators.

引用

页码：892 / 895

页数：4

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