Optical properties of Ge self-organized quantum dots in Si

被引：82

作者：

Peng, CS

Huang, Q

Cheng, WQ

Zhou, JM

Zhang, YH

Sheng, TT

Tung, CH

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Beijing 100080, Peoples R China

[4] Inst Microelect, Singapore 0511, Singapore

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.57.8805

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Small-size, high-density, and vertical-ordering Ge quantum dots are observed in strained Si/Ge short-period superlattices grown on Si(001) at low growth temperature by molecular-beam epitaxy. The photoluminescence (PL) peak position, the strong PL at room temperature, and the high exciton binding energy suggest an indirect-to-direct conversion of the Ge quantum dots. This conversion is in good agreement with the theoretical prediction. The characteristic of absorption directly indicates this conversion. The tunneling of carriers between these quantum dots is also observed. [S0163-1829(98)03515-2].

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页码：8805 / 8808

页数：4

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