Study of surface roughening of tensily strained Si1-x-yGexCy films grown by ultra high vacuum-chemical vapor deposition

被引：7

作者：

Calmes, C

Bouchier, D

Debarre, D

Le Thanh, V

Clerc, C

机构：

[1] Univ Paris 11, IEF, F-91405 Orsay, France

[2] Univ Paris 11, CSNSM, F-91405 Orsay, France

来源：

THIN SOLID FILMS | 2003年 / 428卷 / 1-2期

关键词：

SiGeC; surface roughening; SiC; ultra high vacuum-chemical vapor deposition;

D O I：

10.1016/S0040-6090(02)01246-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we study the kinetics of carbon incorporation in Si1-x-yGexCy/Si(001), by ultra high vacuum-chemical vapor deposition. Layers were grown with a Ge content of 3% and substitutional C content up to 1.7%. All the layers were tensily strained. Using a simple model derived from the commonly accepted growth mechanism for silicon from SiH4, we deduced an expression for the growth rate as a function of the temperature and the SiH4 partial pressure. A qualitative model for surface roughening due to carbon incorporation is proposed. From that, we observed that the surface diffusion of carbon adatoms is limited by hydrogen coverage. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：150 / 155

页数：6

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