Short-pulse generation with broad-band tunability from semiconductor lasers in an external ring cavity

被引：3

作者：

Lee, BL ^{[1
]}

Lin, CF

机构：

[1] Natl Taiwan Univ, Inst Electroopt Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 06期

关键词：

asymmetric dual quantum wells; ring cavity; semiconductor laser; short-pulse generation;

D O I：

10.1109/68.849062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Short optical pulses are generated by actively mode locking semiconductor lasers in an external ring cavity with a very broad tuning range from 795 to 857 nm. The wide tunability is possible because the gain bandwidth is broadened by the use of asymmetric dual quantum wells for the semiconductor laser material. Assuming a Gaussian shape, the generated pulses have pulsewidths of 13-21 ps and spectral widths of 2-4.5 Angstrom for the tuning range. The mode-locked spectrum contains almost no amplified spontaneous emission noise.

引用

页码：618 / 620

页数：3

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