Quantifying ion-induced defects and Raman relaxation length in graphene

被引：1475

作者：

Lucchese, M. M. ^{[2
]}

Stavale, F. ^{[2
]}

Ferreira, E. H. Martins ^{[2
]}

Vilani, C. ^{[2
]}

Moutinho, M. V. O. ^{[3
]}

Capaz, Rodrigo B. ^{[2
,3
]}

Achete, C. A. ^{[2
,4
]}

Jorio, A. ^{[1
,2
]}

机构：

[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil

[2] Inst Nacl Metrol Normalizacao & Qualidade Ind INM, BR-25250020 Duque De Caxias, RJ, Brazil

[3] Univ Fed Rio de Janeiro, Inst Fis, BR-21941972 Rio De Janeiro, Brazil

[4] Univ Fed Rio de Janeiro, PEMM, BR-21945970 Rio De Janeiro, Brazil

来源：

CARBON | 2010年 / 48卷 / 05期

关键词：

CARBON; SCATTERING; GRAPHITE; EDGES;

D O I：

10.1016/j.carbon.2009.12.057

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Raman scattering is used to study disorder in graphene subjected to low energy (90 eV) Ar' ion bombardment The evolution of the intensity ratio between the G band (1585 cm(-1)) and the disorder-induced D band (1345 cm(-1)) with ion dose is determined, providing a spectroscopy-based method to quantify the density of defects in graphene This evolution can be fitted by a phenomenological model, which is in conceptual agreement with a well-established amorphization. trajectory for graphitic materials Our results show that the broadly used Tuinstra-Koenig relation should be limited to the measure of crystallite sizes, and allows extraction of the Raman relaxation length for the disorder-induced Raman scattering process (C) 2010 Elsevier Ltd All rights reserved

引用

页码：1592 / 1597

页数：6

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