Mapping out the distribution of electronic states in the mobility gap of amorphous zinc tin oxide

被引：40

作者：

Erslev, Peter T. ^{[1
]}

Sundholm, Eric S. ^{[2
]}

Presley, Rick E. ^{[2
]}

Hong, David ^{[2
]}

Wager, John F. ^{[2
]}

Cohen, J. David ^{[1
]}

机构：

[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA

[2] Oregon State Univ, Sch EECS, Corvallis, OR 97331 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 19期

基金：

美国国家科学基金会;

关键词：

PHASE-SHIFT ANALYSIS; PHOTOCURRENT; TRANSISTORS;

D O I：

10.1063/1.3262962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous zinc tin oxide (ZTO) is a wide-band-gap (transparent) semiconductor which exhibits high electron mobilities irrespective of its disordered nature. Transient photocapacitance (TPC), drive level capacitance profiling (DLCP), and modulated photocurrent spectroscopy (MPC) were used to determine the electronic state distribution within the mobility gap of ZTO. Conduction band-tail and valence band-tail Urbach energies near 10 and 110 meV were obtained by MPC and TPC, respectively. DLCP indicated free carrier densities in the mid- 10(15) cm(-3) range plus a 0.2eV wide band of defects 0.4eV from the conduction band The MPC spectra for ZTO also disclosed a defect band near the conduction band-tail. (C) 2009 American Institute Physics. [doi:10.1063/1.3262962]

引用

页数：3

共 12 条

[1]

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[2] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].