Scanning tunneling microscopy investigation of truncated InP/GaInP2 self-assembled islands

被引：12

作者：

Ballet, P ^{[1
]}

Smathers, JB ^{[1
]}

Yang, H ^{[1
]}

Workman, CL ^{[1
]}

Salamo, GJ ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 21期

关键词：

D O I：

10.1063/1.1326836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an investigation of the morphology of InP/GaInP three-dimensional (3D) islands obtained by molecular beam epitaxy. This material system should represent the counterpart of the InGaAs/GaAs system for the visible range. The islands are found to be truncated pyramids with observable phosphorous-rich surface reconstruction on top. The investigation of the effect of P overpressure reveals a path to achieve extremely homogeneous 3D islands through an island shape transition. These results help us understand the emerging issue of 3D island shape transition. (C) 2000 American Institute of Physics. [S0003-6951(00)00147-9].

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页码：3406 / 3408

页数：3

相关论文

共 18 条

[1] Morphology of InAs self-organized islands on AlAs surfaces [J].

Ballet, P ;

Smathers, JB ;

Salamo, GJ .

APPLIED PHYSICS LETTERS, 1999, 75 (03) :337-339

[2] STUDY OF THE 2-DIMENSIONAL 3-DIMENSIONAL GROWTH MODE TRANSITION IN METALORGANIC VAPOR-PHASE EPITAXY OF GAINP/INP QUANTUM-SIZED STRUCTURES [J].

CARLSSON, N ;

SEIFERT, W ;

PETERSSON, A ;

CASTRILLO, P ;

PISTOL, ME ;

SAMUELSON, L .

APPLIED PHYSICS LETTERS, 1994, 65 (24) :3093-3095

[3] Shape transition in growth of strained islands [J].

Daruka, I ;

Tersoff, J ;

Barabási, AL .

PHYSICAL REVIEW LETTERS, 1999, 82 (13) :2753-2756

[4] TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF THE MORPHOLOGY OF INP STRANSKI-KRASTANOW ISLANDS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

GEORGSSON, K ;

CARLSSON, N ;

SAMUELSON, L ;

SEIFERT, W ;

WALLENBERG, LR .

APPLIED PHYSICS LETTERS, 1995, 67 (20) :2981-2982

[5] Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying [J].

Joyce, PB ;

Krzyzewski, TJ ;

Bell, GR ;

Joyce, BA ;

Jones, TS .

PHYSICAL REVIEW B, 1998, 58 (24) :15981-15984

[6] Nucleation and growth of self-assembled Ge/Si(001) quantum dots [J].

Le Thanh, V ;

Boucaud, P ;

Debarre, D ;

Zheng, Y ;

Bouchier, D ;

Lourtioz, JM .

PHYSICAL REVIEW B, 1998, 58 (19) :13115-13120

[7] Stable and metastable InGaAs/GaAs island shapes and surfactantlike suppression of the wetting transformation [J].

Leon, R ;

Lobo, C ;

Zou, J ;

Romeo, T ;

Cockayne, DJH .

PHYSICAL REVIEW LETTERS, 1998, 81 (12) :2486-2489

[8] Structural and radiative evolution in quantum dots near the InxGa1-xAs/GaAs Stranski-Krastanow transformation [J].

Leon, R ;

Fafard, S .

PHYSICAL REVIEW B, 1998, 58 (04) :R1726-R1729

[9] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[10] Alloy ordering in GaInP alloys: A cross-sectional scanning tunneling microscopy study [J].

Liu, N ;

Shih, CK ;

Geisz, J ;

Mascarenhas, A ;

Olson, JM .

APPLIED PHYSICS LETTERS, 1998, 73 (14) :1979-1981