Alloy ordering in GaInP alloys: A cross-sectional scanning tunneling microscopy study

被引：28

作者：

Liu, N

Shih, CK ^{[1
]}

Geisz, J

Mascarenhas, A

Olson, JM

机构：

[1] Univ Texas, Dept Phys, Austin, TX 78712 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 14期

关键词：

D O I：

10.1063/1.122341

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a cross-sectional scanning tunneling microscopy (XSTM) study of the spontaneous ordering of Ga0.48In0.52P and Ga0.52In0.48P grown on (001) GaAs substrates by molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE), respectively. The (111)-type alloy ordering could be seen clearly in the OMVPE-grown alloy region. On the other hand, the MBE-grown region shows a very small degree of ordering as revealed by the STM. Most of the ordered region shows (InP)(1)(GAP)(1)-type ordering: alternating InP- and GaP-like ((1) over bar 11) planes. In addition to this type of ordering, we also observe another type of ordering consisting of two InP- like ((1) over bar 11) planes and one GaP-like ((1) over bar 11) plane that we call (InP)(2)(GAP)(1)-type ordering. (C) 1998 American Institute of Physics. [S0003-6951(98)00140-5].

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页码：1979 / 1981

页数：3

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