THE EFFECT OF SELENIUM DOPING ON THE OPTICAL AND STRUCTURAL-PROPERTIES OF GA0.5IN0.5P

被引：18

作者：

KURTZ, SR

OLSON, JM

GORAL, JP

KIBBLER, A

BECK, E

机构：

[1] Solar Energy Research Institute, Golden, 80401, CO

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 08期

关键词：

band gap; disorder; dopant effects; GalnP; MOCVD; morphology; order;

D O I：

10.1007/BF02651392

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Selenium doping at an electron concentration of 1018 - 1019 cm-3 is shown to cause an increase in both the band gap and the disorder of Ga0.5In0.5P films grown by metalorganic chemical vapor deposition on GaAs substrates. The effect of selenium is shown to be very similar to that of the p-type dopants, zinc and magnesium. Selenium doping is also shown to have a dramatic smoothing effect on the surface morphology of Ga0.5In0.5P films. © 1990 The Mineral,Metal & Materials Society,Inc.

引用

页码：825 / 828

页数：4

共 27 条

[1] ELECTROREFLECTANCE AND BAND-STRUCTURE OF GAXIN1-XP ALLOYS
ALIBERT, C
CHEVALLI.J
BORDURE, G
LAUGIER, A
[J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1301 - &
[2] ORDERING OF ISOVALENT INTERSEMICONDUCTOR ALLOYS
BERNARD, JE
FERREIRA, LG
WEI, SH
ZUNGER, A
[J]. PHYSICAL REVIEW B, 1988, 38 (09): : 6338 - 6341
[3] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB
BURSTEIN, E
[J]. PHYSICAL REVIEW, 1954, 93 (03): : 632 - 633
[4] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE
CASEY, HC
PANISH, MB
CHANG, LL
[J]. PHYSICAL REVIEW, 1967, 162 (03): : 660 - +
[5] DISORDERING OF THE ORDERED STRUCTURE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GA0.5IN0.5P ON (001) GAAS SUBSTRATES BY ZINC DIFFUSION
DABKOWSKI, FP
GAVRILOVIC, P
MEEHAN, K
STUTIUS, W
WILLIAMS, JE
SHAHID, MA
MAHAJAN, S
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (25) : 2142 - 2144
[6] UNEXPECTEDLY HIGH-ENERGY PHOTO-LUMINESCENCE OF HIGHLY SI DOPED GAAS GROWN BY MOVPE
DRUMINSKI, M
WOLF, HD
ZSCHAUER, KH
WITTMAACK, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 318 - 324
[7] SILICON AND SELENIUM DOPING EFFECTS ON BAND-GAP ENERGY AND SUBLATTICE ORDERING IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
GOMYO, A
HOTTA, H
HINO, I
KAWATA, S
KOBAYASHI, K
SUZUKI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08): : L1330 - L1333
[8] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
GOMYO, A
KOBAYASHI, K
KAWATA, S
HINO, I
SUZUKI, T
YUASA, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373
[9] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
GOMYO, A
SUZUKI, T
KOBAYASHI, K
KAWATA, S
HINO, I
YUASA, T
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 673 - 675
[10] OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS
GOMYO, A
SUZUKI, T
IIJIMA, S
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (25) : 2645 - 2648

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