ORDERING AND DISORDERING OF DOPED GA0.5IN0.5P

被引：27

作者：

KURTZ, SR

OLSON, JM

FRIEDMAN, DJ

KIBBLER, AE

ASHER, S

机构：

[1] National Renewable Energy Laboratory, Golden, 80401, CO

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 05期

关键词：

BAND GAP; GAINP; ORDER-DISORDER;

D O I：

10.1007/BF02671225

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The band gap of Ga0.5In0.5P is reported as a function of doping level and growth rate. The lowest band gaps are obtained for hole concentrations of about 2 x 10(17) cm-3. For samples doped p-type above 1 x 10(18) cm-3, the band gap increases dramatically, regardless of growth rate. This effect is shown to be the result of disordering during growth rather than a change in the equilibrium surface structure with doping. The doping level dependence of the band gap of Ga0.5In0.5P samples grown at higher and lower growth rates differs for selenium and zinc doping even though the effects of high doping are the same for both dopants.

引用

收藏

页码：431 / 435

页数：5

相关论文

共 22 条

[1] SUBSTRATE-DRIVEN ORDERING MICROSTRUCTURE IN GAXIN1-XP ALLOYS [J].

BELLON, P ;

CHEVALIER, JP ;

AUGARDE, E ;

ANDRE, JP ;

MARTIN, GP .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) :2388-2394

[2] ORDERING OF ISOVALENT INTERSEMICONDUCTOR ALLOYS [J].

BERNARD, JE ;

FERREIRA, LG ;

WEI, SH ;

ZUNGER, A .

PHYSICAL REVIEW B, 1988, 38 (09) :6338-6341

[3] EFFECT OF GROWTH-RATE ON PROPERTIES OF GA0.51IN0.49P GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

CAO, DS ;

REIHLEN, EH ;

CHEN, GS ;

KIMBALL, AW ;

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) :279-284

[4] ORGANOMETALLIC VAPOR-PHASE EPITAXY OF HIGH-QUALITY GA0.51IN0.49P AT HIGH GROWTH-RATES [J].

CAO, DS ;

KIMBALL, AW ;

CHEN, GS ;

FRY, KL ;

STRINGFELLOW, GB .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) :5384-5387

[5] GA SELF-DIFFUSION IN GAAS [J].

COHEN, RM .

JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (06) :425-430

[6] SURFACE RECONSTRUCTIONS AND SURFACE ENERGIES OF MONOLAYER-COVERAGE CATION-TERMINATED GA0.5IN0.5P(001) SURFACES [J].

FROYEN, S ;

ZUNGER, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :2176-2181

[7] SURFACE-INDUCED ORDERING IN GAINP [J].

FROYEN, S ;

ZUNGER, A .

PHYSICAL REVIEW LETTERS, 1991, 66 (16) :2132-2135

[8] DISORDERING OF THE ORDERED STRUCTURE IN MOCVD-GROWN GAINP AND ALGAINP BY IMPURITY DIFFUSION AND THERMAL ANNEALING [J].

GAVRILOVIC, P ;

DABKOWSKI, FP ;

MEEHAN, K ;

WILLIAMS, JE ;

STUTIUS, W ;

HSIEH, KC ;

HOLONYAK, N ;

SHAHID, MA ;

MAHAJAN, S .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :426-433

[9] SILICON AND SELENIUM DOPING EFFECTS ON BAND-GAP ENERGY AND SUBLATTICE ORDERING IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

GOMYO, A ;

HOTTA, H ;

HINO, I ;

KAWATA, S ;

KOBAYASHI, K ;

SUZUKI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08) :L1330-L1333

[10] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY [J].

GOMYO, A ;

SUZUKI, T ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

YUASA, T .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :673-675