Optically controlled photonic crystal nanocavity in silicon

被引:8
作者
Preble, SF [1 ]
Almeida, VR [1 ]
Lipson, M [1 ]
机构
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
来源
TUNING THE OPTICAL RESPONSE OF PHOTONIC BANDGAP STRUCTURES | 2004年 / 5511卷
关键词
integrated photonics; photonic crystal; all-optical switching; plasma dispersion effect; silicon;
D O I
10.1117/12.561635
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We present experimental demonstration of fast all-optical switching in a one-dimensional photonic crystal nanocavity embedded in a Silicon waveguide. The transmission of the device is tuned by injecting free carriers into the nanocavity region using an optical pump beam. By strongly confining light in the photonic crystal nanocavity the sensitivity of light to small refractive index changes is enhanced. The small cavity volume (similar to0.1 mum) and unpassivated sidewalls enable ultra-fast switching speeds with low pulse energies. Using a pulse energy of only 60pJ, a refractive index change of approximately 10(-2) is obtained. This small index change, due to the high confinement nature of the cavity structure, leads to a strong change in transmission spectrum. Consequently, the resonance is shifted up to its full-width-at halfmaximum (similar to7.5nm), and the transmission of the device is modulated by 71% with a time response of less than 1.5 ns. Such a device could open the door to the large-scale integration of ultra-fast modulators and switches.
引用
收藏
页码:10 / 17
页数:8
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