On a novel ferro resistive random access memory (FRRAM): Basic model and first experiments

被引：27

作者：

Meyer, R ^{[1
]}

Contreras, JR ^{[1
]}

Petraru, A ^{[1
]}

Kohlstedt, H ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch & CNI, D-52425 Julich, Germany

来源：

INTEGRATED FERROELECTRICS | 2004年 / 64卷

关键词：

D O I：

10.1080/10584580490893655

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a novel non-volatile memory concept for resistive information storage, The particular device structure consists of a conductive ferroelectric/non-ferroelectric 2-layer sequence. Resistive switching is observed. by applying a voltage pulses. Our model predicts that the switching correlates with a change of the potential barrier height inside the structure. It may also explain resistive switching in systems consisting only of one ferroelectric layer and by assuming the presence. of nonferroelectric interface layers. The operation of the device is demonstrated for the PZT (48/52) system with a SrRuO3 bottom electrode and a Pt top electrode. The simulated and measured I-V curves are in good agreement.

引用

页码：77 / 88

页数：12

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