Modeling of retention characteristics for metal and semiconductor nanocrystal memories

被引：32

作者：

Guan, Weihua ^{[1
]}

Long, Shibing ^{[1
]}

Liu, Ming ^{[1
]}

Liu, Qi ^{[1
]}

Hu, Yuan ^{[1
]}

Li, Zhigang ^{[1
]}

Jia, Rui ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Device Integrat, Beijing 100029, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 05期

关键词：

device modeling; nanocrystal memory; quantum confinement; retention characteristic;

D O I：

10.1016/j.sse.2007.03.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The charge retention characteristics of metal nanocrystal (MNC) and semiconductor nanocrystal (SNQ memory devices are comparatively studied in this paper. A charge retention model is proposed, taking into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memory observed in the experiment. Simulation results are in good agreement with experimental data, which confirms the validity of this model. The impact of the nanocrystal size, tunneling dielectric materials (especially high-K dielectrics), and tunneling dielectric thickness on the retention characteristics are all investigated for both the metal nanocrystals and the semiconductor nanocrystals. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：806 / 811

页数：6

共 20 条

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