Hole-versus electron-based operations in SiGe nanocrystal nonvolatile memories

被引：19

作者：

de Sousa, J. S.

Freire, V. N.

Leburton, J.-P.

机构：

[1] Univ Fed Ceara, Dept Fis, BR-60455760 Fortaleza, Ceara, Brazil

[2] Univ Illinois, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 22期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2741598

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comparative study between electron- and hole-based data storage operations in Si1-xGex nanocrystal nonvolatile memories is presented. The authors show that the valence band-edge alignment is ideally suited for holes storage, which allows for extremely long retention times for alloy composition x>0 without affecting the programming performances. (C) 2007 American Institute of Physics.

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页数：3

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