Strain-compensated InGa(As)P-InAsP active regions for 1.3-μm wavelength lasers

被引：13

作者：

Dries, JC ^{[1
]}

Gokhale, MR ^{[1
]}

Uenohara, H ^{[1
]}

Forrest, SR ^{[1
]}

机构：

[1] Princeton Univ, Ctr Photon & Optoelect Mat, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 01期

关键词：

quantum-well lasers; semiconductor lasers;

D O I：

10.1109/68.651096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The demonstration of an optimized strain-compensated multiple-quantum-well (MQW) active region for use in 1.3-mu m wavelength lasers is described, Utilizing narrow bandgap tensile-strained InGaAsP instead of wide bandgap InGaP barriers in strain-compensated lasers, we observe a reduction in threshold current density (J(th)) from 675 to 310 A/cm(2) and in T-o from 75 K to 65 K for 2-mm long seven quantum-well devices, Additionally, the lowest reported Jth for MBE grown 1.3-mu m wavelength lasers of 120 A/cm(2) for single-quantum-well (SQW) 4,5-mm-long lasers was attained.

引用

页码：42 / 44

页数：3

共 13 条

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