Er-doped hydrogenated amorphous silicon: structural and optical properties

被引：16

作者：

Kim, MJ ^{[1
]}

Mebratu, GK ^{[1
]}

Sung, JY ^{[1
]}

Shin, JH ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Phys, Yusung Gu, Taejon 35701, South Korea

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2003年 / 315卷 / 03期

关键词：

D O I：

10.1016/S0022-3093(02)01624-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of erbium-doping on the structural and optical properties of hydrogenated amorphous silicon (a-Si:H) is investigated. Optical absorption and Raman spectra indicate that erbium doping introduces defect states, and that above a concentration of 0.27 at.%, induces strong structural disorder. The photoluminescence measurements show that erbium doping introduces non-radiative decay paths for carriers in a-Si:H, leading to decrease in both the Er3+ and intrinsic a-Si:H luminescence intensity when the Er concentration is increased to more than 0.04 at.%. The results are compared to that of Er-doped crystalline Si, and the possible excitation mechanisms of Er in a-Si:H are discussed. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：312 / 320

页数：9

共 41 条

[1] LOCAL-STRUCTURE OF 1.54-MU-M-LUMINESCENCE ER-3+ IMPLANTED IN SI [J].

ADLER, DL ;

JACOBSON, DC ;

EAGLESHAM, DJ ;

MARCUS, MA ;

BENTON, JL ;

POATE, JM ;

CITRIN, PH .

APPLIED PHYSICS LETTERS, 1992, 61 (18) :2181-2183

[2] STRUCTURAL INFORMATION FROM THE RAMAN-SPECTRUM OF AMORPHOUS-SILICON [J].

BEEMAN, D ;

TSU, R ;

THORPE, MF .

PHYSICAL REVIEW B, 1985, 32 (02) :874-878

[3] THE ELECTRICAL AND DEFECT PROPERTIES OF ERBIUM-IMPLANTED SILICON [J].

BENTON, JL ;

MICHEL, J ;

KIMERLING, LC ;

JACOBSON, DC ;

XIE, YH ;

EAGLESHAM, DJ ;

FITZGERALD, EA ;

POATE, JM .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) :2667-2671

[4] STRUCTURAL ORDER IN THIN A-SI-H FILMS [J].

BERNTSEN, AJM ;

VANSARK, WGJHM ;

VANDERWEG, WF .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) :1964-1967

[5] SEPARATING THE EFFECTS OF HYDROGEN AND BOND-ANGLE VARIATION ON THE AMORPHOUS-SILICON BAND-GAP [J].

BERNTSEN, AJM ;

VANDERWEG, WF ;

STOLK, PA ;

SARIS, FW .

PHYSICAL REVIEW B, 1993, 48 (19) :14656-14658

[6] ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

BRESLER, MS ;

GUSEV, OB ;

KUDOYAROVA, VK ;

KUZNETSOV, AN ;

PAK, PE ;

TERUKOV, EI ;

YASSIEVICH, IN ;

ZAKHARCHENYA, BP ;

FUHS, W ;

STURN, A .

APPLIED PHYSICS LETTERS, 1995, 67 (24) :3599-3601

[7]

COFFA S, 1996, MAT RES SOC S P, V422

[8] Significant improvements in stability of amorphous silicon solar cells by using ECR deposition [J].

Dalal, VL ;

Kaushal, S ;

Knox, R ;

Han, K ;

Martin, F .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 198 :1101-1104

[9] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[10] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

ENNEN, H ;

POMRENKE, G ;

AXMANN, A ;

EISELE, K ;

HAYDL, W ;

SCHNEIDER, J .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :381-383

← 1 2 3 4 5 →