Properties of a-SiC:H films deposited in high power regime

被引：18

作者：

Ambrosone, G

Ballarini, V

Coscia, U

Ferrero, S

Giorgis, E

Maddalena, P

Patelli, A

Rava, P

Rigato, V

机构：

[1] Univ Naples Federico II, INFM, Dipartimento Sci Fis, I-80126 Naples, Italy

[2] INFM, I-10129 Turin, Italy

[3] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy

[4] Elettrorava SPA, I-10040 Savonera, Torino, Italy

[5] Ist Nazl Fis Nucl, Lab Nazl Legnaro, Legnaro, Italy

来源：

THIN SOLID FILMS | 2003年 / 427卷 / 1-2期

关键词：

silicon carbon; plasma enhanced chemical vapor deposition; high power regime; luminescence;

D O I：

10.1016/S0040-6090(02)01144-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The aim of the present paper is the study of the RF power effects on the properties of hydrogenated amorphous silicon-carbon (a-SiC:H) films, deposited in high power regime in a conventional plasma enhanced chemical vapor deposition system by using silane-methane gas mixtures highly diluted in hydrogen. Varying the RF power chemically ordered a-SiC:H alloys can be grown controlling the carbon content, C/[C+Si], and consequently the energy gap from 0.20 to 0.57 and 2.17 to 3.23 eV, respectively. C-rich films show defect density lower than 2 X 10(17) cm(-3) and photoluminescence (PL) at room temperature. The PL peak position of the spectra shifts from 1.70 to 2.54 eV as the carbon content increases from 0.3 to 0.57. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：279 / 283

页数：5

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