X-ray photoemission study of CoFeB/MgO thin film bilayers

被引:87
作者
Read, J. C. [1 ]
Mather, P. G. [1 ]
Buhrman, R. A. [1 ]
机构
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2717091
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors present results from an x-ray photoemission spectroscopy study of CoFeB/MgO bilayers where they observe process-dependent formation of B, Fe, and Co oxides at the CoFeB/MgO interface due to oxidation of CoFeB during MgO deposition. Vacuum annealing reduces the Co and Fe oxides but further incorporates B into the MgO forming a composite MgBxOy layer. Inserting an Mg layer between CoFeB and MgO introduces an oxygen sink, providing increased control over B content in the barrier. (c) 2007 American Institute of Physics.
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页数:3
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