Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

The effect of an inclined substrate on heteroepitaxial diamond has been investigated on 4 degrees off beta-SiC(001) tilted around the [<(1)over bar10>] axis. Homogeneous macro steps with (001) terraces are observed in the [<(1)over bar10>] direction forming, a vicinal angle of 3 degrees-4 degrees from the (001) surface reflecting the substrate inclination. The selective growth is effective even if the dominant orientation is inclined by several degrees from the surface normal, The tilt deviation is less than 1 degrees in the heteroepitaxial film. p-channel field effect transistors have been fabricated on these heteroepitaxial films. The device performance is as good as that on homoepitaxial films. (C) 1998 American Institute of Physics.