AlInGaAs/AlGaAs strained-layer 850 nm vertical-cavity lasers with very low thresholds

被引：15

作者：

Ko, J ^{[1
]}

Hegblom, ER ^{[1
]}

Akulova, Y ^{[1
]}

Margalit, NM ^{[1
]}

Coldren, LA ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 18期

关键词：

vertical cavity surface emitting lasers; semiconductor junction lasers;

D O I：

10.1049/el:19971037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report a low CW. RT threshold current (I(th)) of 156 mu A from a 2.8 mu m diameter vertical-cavity laser (VCL) with three AlInGaAs quantum wells. Devices show no degradation after 30h of burn-in testing at a constant current density of 22kA/cm(2) and a junction temperature of 140 degrees C. In addition, devices were measured at various stage temperatures and it was found that the lowest I(th), 110 mu A for the 2.8 mu m diameter VCL, occurs near 230K, where the quantum well gain peak and the cavity mode are aligned.

引用

页码：1550 / 1551

页数：2

共 6 条

[1]

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[3]

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