Degradation effects in TlBr single crystals under prolonged bias voltage

被引：47

作者：

Kozlov, V. ^{[1
]}

Kemell, M. ^{[1
]}

Vehkamaki, M. ^{[1
]}

Leskela, M. ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2007年 / 576卷 / 01期

关键词：

compound semiconductors; TlBr; ionic current; electrode degradation;

D O I：

10.1016/j.nima.2007.01.110

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Electrical properties of TlBr purified by hydrothermal annealing in pure water were studied by I-V, capacitance and photocurrent measurements using Ti-electrodes which were deposited by electron-beam evaporation. Time characteristics of the current during the aging were recorded under fixed voltage (0-200 V) at different temperatures 277-353 K. The samples were additionally characterised by the X-ray powder diffraction and rocking curve methods. The degradation of TlBr was studied by scanning electron microscopy (SEM) and energy dispersive X-ray spectrometry (EDS). The composition at the electrode area was observed to be different for the negative and positive sides. (C) 2007 Elsevier B.V. All rights reserved.

引用

收藏

页码：10 / 14

页数：5

相关论文

共 10 条

[1] Thallium bromide optical and radiation detectors for X-ray and gamma-ray spectroscopy [J].

Hitomi, K ;

Matsumoto, M ;

Muroi, O ;

Shoji, T ;

Hiratate, Y .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (05) :2526-2529

[2] Development of the technology for growing TlBr detector crystals [J].

Kouznetsov, MS ;

Lisitsky, IS ;

Zatoloka, SI ;

Gostilo, VV .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2004, 531 (1-2) :174-180

[3] Effects of polishing and etching on TlBr single crystals [J].

Kozlov, V ;

Leskelä, M ;

Kemell, M ;

Sipilä, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2006, 563 (01) :58-61

[4] Annealing and characterisation of TlBr crystals for detector applications [J].

Kozlov, V ;

Leskelä, M ;

Sipilä, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 546 (1-2) :200-204

[5] TlBr crystal growth, purification and characterisation [J].

Kozlov, V ;

Leskelä, M ;

Prohaska, T ;

Schultheis, G ;

Stingeder, G ;

Sipilä, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2004, 531 (1-2) :165-173

[6]

KOZLOV V, 2005, 7 INT C POS SENS DET, P21

[7] Compound semiconductor radiation detectors [J].

Owens, A ;

Peacock, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2004, 531 (1-2) :18-37

[8] PRESSURE AND TEMPERATURE DEPENDENCES OF THE IONIC CONDUCTIVITIES OF THE THALLOUS HALIDES TLCL, TLBR, AND TLI [J].

SAMARA, GA .

PHYSICAL REVIEW B, 1981, 23 (02) :575-586

[9] Influence of electronic and ionic processes on electrical properties of TlBr crystals [J].

Vaitkus, J ;

Banys, J ;

Gostilo, V ;

Zatoloka, S ;

Mekys, A ;

Storasta, J ;

Zindulis, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 546 (1-2) :188-191

[10] Investigation of degradation of electrical and photoelectrical properties in TlBr crystals [J].

Vaitkus, J ;

Gostilo, V ;

Jasinskaite, R ;

Mekys, A ;

Owens, A ;

Zatoloka, S ;

Zindulis, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2004, 531 (1-2) :192-196