Electrical and photoelectrical performances of nano-photodiode based on ZnO nanowires

被引：99

作者：

He, Jr Hau

Ho, Shu Te

Wu, Tai Bor

Chen, Lih Juann ^{[1
]}

Wang, Zhong Lin

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

CHEMICAL PHYSICS LETTERS | 2007年 / 435卷 / 1-3期

基金：

美国国家航空航天局; 美国国家卫生研究院; 美国国家科学基金会;

关键词：

D O I：

10.1016/j.cplett.2006.12.061

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A prototype nano-photodiode has been demonstrated based on heterojunctions between ZnO nanowires and p-Si substrate. The electrical and photoelectrical performances of the ZnO/Si structure have been characterized by a conducting atomic force microscopy at nanometer spatial resolution. The photoelectrical measurements demonstrate that the photodiode has high sensitivity and selectivity to UV light. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：119 / 122

页数：4

共 24 条

[11] Large-scale Ni-doped ZnO nanowire arrays and electrical and optical properties [J].