Hexagonal InN/sapphire heterostructures:: interplay of interface and layer properties

被引：13

作者：

Mamutin, VV

Shubina, TV

Vekshin, VA

Ratnikov, VV

Toropov, AA

Ivanov, SV

Karlsteen, M

Södervall, U

Willander, M

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Chalmers Univ Technol, Dept Microelect & Nanosci, S-41296 Gothenburg, Sweden

[3] Gothenburg Univ, S-41296 Gothenburg, Sweden

来源：

APPLIED SURFACE SCIENCE | 2000年 / 166卷 / 1-4期

基金：

俄罗斯基础研究基金会;

关键词：

MBE; AlInN; interface; transmission electron microscopy; x-ray diffraction; optical transmission;

D O I：

10.1016/S0169-4332(00)00382-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Formation of an AlInN interface transition layer in plasma-assisted molecular beam epitaxy (PA MBE) of InN/Al2O3 (0001) structure has been found by high-resolution X-ray diffraction (XRD), transmission electron microscopy (TEM), secondary ion mass-spectroscopy (SIMS) and optical transmission techniques. Having a thickness of below 100 nm, an Al content of similar to 0.3 and rather sharp interfaces, the interlayer improves the quality of the main InN film, allowing its high-temperature growth without In droplet formation. XRD Theta-rocking curves width of 350 are sec, Hall mobility of 600 cm(2)/V s (300 K) at electron concentration of around 10(20) cm(-3) have been achieved for the best InN epilayer. Employed initial growth stage affects significantly the quality of both the AlInN interface layer and the InN layer. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：87 / 91

页数：5

共 12 条

[1] Incorporation of indium during molecular beam epitaxy of InGaN [J].

Bottcher, T ;

Einfeldt, S ;

Kirchner, V ;

Figge, S ;

Heinke, H ;

Hommel, D ;

Selke, H ;

Ryder, PL .

APPLIED PHYSICS LETTERS, 1998, 73 (22) :3232-3234

[2] HETEROEPITAXIAL GROWTH OF INN ON ALN-NUCLEATED (00.1) SAPPHIRE BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON RESONANCE-ASSISTED REACTIVE MAGNETRON SPUTTERING [J].

BRYDEN, WA ;

ECELBERGER, SA ;

KISTENMACHER, TJ .

APPLIED PHYSICS LETTERS, 1994, 64 (21) :2864-2866

[3] GROWTH OF INN FILMS ON GAAS(111) AND GAP(111) SUBSTRATES BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY [J].

GUO, QX ;

OGAWA, H ;

YAMANO, H ;

YOSHIDA, A .

APPLIED PHYSICS LETTERS, 1995, 66 (06) :715-717

[4] TEMPERATURE-DEPENDENCE OF BAND-GAP CHANGE IN INN AND ALN [J].

GUO, QX ;

YOSHIDA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (5A) :2453-2456

[5] MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF THIN (LESS-THAN-2-MU-M) GASB LAYERS ON GAAS(100) SUBSTRATES [J].

IVANOV, SV ;

ALTUKHOV, PD ;

ARGUNOVA, TS ;

BAKUN, AA ;

BUDZA, AA ;

CHALDYSHEV, VV ;

KOVALENKO, YA ;

KOPEV, PS ;

KUTT, RN ;

MELTSER, BY ;

RUVIMOV, SS ;

SHAPOSHNIKOV, SV ;

SOROKIN, LM ;

USTINOV, VM .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (03) :347-356

[6]

KARPOV SY, 1998, INTERNET J NITRIDE S, V66, P3465

[7]

MAMUTIN VV, 1999, NANOSTRUCTURES PHYSI, P521

[8] GROWTH OF GAN BY ECR-ASSISTED MBE [J].

MOUSTAKAS, TD ;

LEI, T ;

MOLNAR, RJ .

PHYSICA B, 1993, 185 (1-4) :36-49

[9] Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy [J].

Pan, YC ;

Lee, WH ;

Shu, CK ;

Lin, HC ;

Chiang, CI ;

Chang, H ;

Lin, DS ;

Lee, MC ;

Chen, WK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2A) :645-648

[10] GAN, AIN, AND INN - A REVIEW [J].

STRITE, S ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1237-1266

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