Hot carrier recombination model of visible electroluminescence from metal-oxide-silicon tunneling diodes

被引：20

作者：

Liu, CW ^{[1
]}

Chang, ST

Liu, WT

Chen, MJ

Lin, CF

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[2] Grad Inst Elect Engn, Taipei, Taiwan

[3] Inst Electroopt Engn, Taipei, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 26期

关键词：

D O I：

10.1063/1.1332825

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the visible electroluminescence at room temperature from metal-oxide-silicon tunneling diodes. As biased in the Fowler-Nordheim regime, the electrons tunnel from the gate electrode through the ultrathin oxide and reach the Si anode with sufficiently high energy. The hot electrons cause the impact ionization, and generate the secondary hot electrons and hot holes in Si substrates. The visible light comes from the radiative recombination between the secondary hot electrons and hot holes, and the hot carrier recombination model can fit the visible electroluminescence spectra. (C) 2000 American Institute of Physics. [S0003- 6951(00)02751-0].

引用

页码：4347 / 4349

页数：3

共 14 条

[1]

HOT-CARRIER LUMINESCENCE IN SI [J].

BUDE, J ;

SANO, N ;

YOSHII, A .

PHYSICAL REVIEW B, 1992, 45 (11) :5848-5856

[2]

Figielsky T., 1962, P INT C PHYS SEMICON, P853

[3]

LIGHT-EMITTING DEVICES IN INDUSTRIAL CMOS TECHNOLOGY [J].

KRAMER, J ;

SEITZ, P ;

STEIGMEIER, EF ;

AUDERSET, H ;

DELLEY, B ;

BALTES, H .

SENSORS AND ACTUATORS A-PHYSICAL, 1993, 37-8 :527-533

[4]

Liu C. W., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P749, DOI 10.1109/IEDM.1999.824259

[5]

A novel photodetector using MOS tunneling structures [J].

Liu, CW ;

Liu, WT ;

Lee, MH ;

Kuo, WS ;

Hsu, BC .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (06) :307-309

[6]

Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes [J].

Liu, CW ;

Lee, MH ;

Chen, MJ ;

Lin, IC ;

Lin, CF .

APPLIED PHYSICS LETTERS, 2000, 76 (12) :1516-1518

[7]

Monolithic integration of light emitting diodes, detectors and optical fibers on a Silicon wafer: A CMOS compatible optical sensor [J].

Misiakos, K ;

Tsoi, E ;

Halmagean, E ;

Kakabakos, S .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :25-28

[8]

Model for visible photon emission from reverse-biased silicon p-n junctions [J].

Obeidat, AT ;

Kalayjian, Z ;

Andreou, AG ;

Khurgin, JB .

APPLIED PHYSICS LETTERS, 1997, 70 (04) :470-471

[9]

An efficient low voltage, high frequency silicon CMOS light emitting device and electro-optical interface [J].

Snyman, LW ;

du Plessis, M ;

Seevinck, E ;

Aharoni, H .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (12) :614-617

[10]

Sze S.M, 1981, PHYS SEMICONDUCTOR D, P45

← 1 2 →