Effects of growth temperature on the properties of ZnO/GaAs prepared by metalorganic chemical vapor deposition

被引：39

作者：

Bang, KH ^{[1
]}

Hwang, DK ^{[1
]}

Lim, SW ^{[1
]}

Myoung, JM ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Informat & Elect Mat Res Lab, Seodaemun Gu, Seoul 120749, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 250卷 / 3-4期

关键词：

photoluminescence; electrical properties; metalorganic chemical vapor deposition; ZnO;

D O I：

10.1016/S0022-0248(02)02456-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A series of ZnO films were grown on GaAs(0 0 1) substrates at different growth temperatures in the range 250-720degreesC by metalorganic chemical vapor depostion. Field emission scanning electron microscopy was utilized to investigate the surface morphology of ZnO films. The crystallinity of ZnO films was investigated by the double-crystal X-ray diffractometry. The optical and electrical properties of ZnO films were also investigated using room-temperature photoluminescence and Hall measurements. Arrhenius plots of the growth rate versus reciprocal temperature revealed the kinetically limited growth behavior depending on the growth temperature. It was found that the surface morphology, structural, optical and electrical properties of the films were improved with increasing growth temperature to 650degreesC. All the properties of the film grown at 720degreesC were degraded due to the decomposition of ZnO film. (C) 2003 Elsevier. Science B.V. All rights reserved.

引用

页码：437 / 443

页数：7

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