Bulk transport measurements in ZnO: The effect of surface electron layers

被引：105

作者：

Allen, M. W. ^{[1
]}

Swartz, C. H. ^{[1
]}

Myers, T. H. ^{[2
,3
]}

Veal, T. D. ^{[4
]}

McConville, C. F. ^{[4
]}

Durbin, S. M. ^{[1
]}

机构：

[1] Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8140, New Zealand

[2] W Virginia Univ, Dept Phys, Morgantown, WV 26506 USA

[3] Texas State Univ San Marcos, Mat Sci & Engn Program, San Marcos, TX 78666 USA

[4] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

N-TYPE; GROWTH;

D O I：

10.1103/PhysRevB.81.075211

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetotransport measurements and x-ray photoemission spectroscopy were used to investigate the surface conductivity of ZnO. Near-surface downward band bending, consistent with electron accumulation, was found on the polar and nonpolar faces of bulk ZnO single crystals. A significant polarity effect was observed in that the downward band bending was consistently stronger on the Zn-polar face and weaker on the O-polar face. The surface electron accumulation layer was found to significantly influence the electrical properties of high resistivity, hydrothermally grown bulk ZnO crystals at temperatures below 200 K, and is largely responsible for the anomalously low electron mobility reported for this material.

引用

页数：6

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