Quantitative analysis of surface donors in ZnO

被引：44

作者：

Look, D. C. ^{[1
,2
]}

机构：

[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[2] Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

来源：

SURFACE SCIENCE | 2007年 / 601卷 / 23期

基金：

美国国家科学基金会;

关键词：

zinc oxide; hall-effect; temperature dependence; surface conductivity; donors; acceptors;

D O I：

10.1016/j.susc.2007.09.030

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

At low temperatures, typically up to 30 K or even higher, the electrical properties of bulk ZnO samples are nearly always dominated by a conductive near-surface region. Here we show that a single, low-temperature Hall-effect measurement, say at 20 K, and a reasonable assumption regarding the upper limit of the surface compensation ratio, yields a value of surface donor concentration N-D,N-surf accurate to within about a factor two. Examples are given for bulk materials grown by the vapor-phase, melt, and hydrothermal processes. (C) 2007 Elsevier B.V. All rights reserved.

引用

收藏

页码：5315 / 5319

页数：5

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