Field-effect transistors comprising molecular beam deposited α,ω-di-hexyl-hexathienylene and polymeric insulator

被引：175

作者：

Dimitrakopoulos, CD ^{[1
]}

Furman, BK ^{[1
]}

Graham, T ^{[1
]}

Hegde, S ^{[1
]}

Purushothaman, S ^{[1
]}

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

SYNTHETIC METALS | 1998年 / 92卷 / 01期

关键词：

field-effect transistors; alpha; omega-di-hexyl-hexathienylene; molecular beam deposition;

D O I：

10.1016/S0379-6779(98)80021-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Insulated-gate field-effect transistors (IGFETs) comprising molecular beam deposited alpha,omega-di-hexyl-hexathienylene (DH6T) as the semiconductor layer and different polymeric gate insulators were fabricated and tested. Field-effect mobility values up to 0.13 cm(2) V-1 s(-1) were obtained, which are the highest values obtained from thin-film transistors of DH6T, (C) 1998 Published by Elsevier Science S.A.

引用

页码：47 / 52

页数：6

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