Effect of growth temperature on ZnO thin film deposited on SiO2 substrate

被引：55

作者：

Kim, KS ^{[1
]}

Kim, HW ^{[1
]}

Lee, CM ^{[1
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 98卷 / 02期

关键词：

MOCVD; ZnO; low temperature; thin film;

D O I：

10.1016/S0921-5107(02)00754-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the effect of deposition temperature on the growth and structural quality of ZnO films on SiO2 substrate in the range of 100-250 degreesC using the metal organic chemical vapor deposition (MOCVD) technique. We revealed that highly c-axis oriented ZnO thin films were obtained at the temperature of 200-250 degreesC and the ZnO thin film was successfully deposited at the lower temperature of 100-150 degreesC. The c-axis orientation of the film improved and the grain size increased by increasing growth temperature. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：135 / 139

页数：5

共 15 条

[1] Epitaxial ZnO piezoelectric thin films for saw filters [J].

Emanetoglu, NW ;

Gorla, C ;

Liu, Y ;

Liang, S ;

Lu, Y .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 1999, 2 (03) :247-252

[2] Surface textured ZnO films for thin film solar cell applications by expanding thermal plasma CVD [J].

Groenen, R ;

Löffler, J ;

Sommeling, PM ;

Linden, JL ;

Hamers, EAG ;

Schropp, REI ;

van de Sanden, MCM .

THIN SOLID FILMS, 2001, 392 (02) :226-230

[3] Multicolored light emitters on silicon substrates [J].

Guha, S ;

Bojarczuk, NA .

APPLIED PHYSICS LETTERS, 1998, 73 (11) :1487-1489

[4] ZINC-OXIDE FILMS FOR ACOUSTOELECTRIC DEVICE APPLICATIONS [J].

HICKERNELL, FS .

IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1985, 32 (05) :621-629

[5] ZnO growth on Si by radical source MBE [J].

Iwata, K ;

Fons, P ;

Niki, S ;

Yamada, A ;

Matsubara, K ;

Nakahara, K ;

Tanabe, T ;

Takasu, H .

JOURNAL OF CRYSTAL GROWTH, 2000, 214 :50-54

[6] Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition [J].

Joseph, M ;

Tabata, H ;

Kawai, T .

APPLIED PHYSICS LETTERS, 1999, 74 (17) :2534-2536

[7] Surface acoustic wave characteristics of a ZnO/quartz substrate structure having a large electromechanical coupling factor and a small temperature coefficient [J].

Kadota, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (5B) :3076-3080

[8] Effect of RF power on optical and electrical properties of ZnO thin film by magnetron sputtering [J].

Lu, YM ;

Hwang, WS ;

Liu, WY ;

Yang, JS .

MATERIALS CHEMISTRY AND PHYSICS, 2001, 72 (02) :269-272

[9] Control of morphology and orientation of ZnO thin films grown on SiO2/Si substrates [J].

Muthukumar, S ;

Gorla, CR ;

Emanetoglu, NW ;

Liang, S ;

Lu, Y .

JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) :197-201

[10] Growth, structure and optical characterization of high quality ZnO thin films obtained by spray pyrolysis [J].

Paraguay, F ;

Estrada, W ;

Acosta, DR ;

Andrade, E ;

Miki-Yoshida, M .

THIN SOLID FILMS, 1999, 350 (1-2) :192-202

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