Dehydration after plasma oxidation of porous low-dielectric-constant spin-on-glass films

被引：23

作者：

Kondoh, E ^{[1
]}

Asano, T

Arao, H

Nakashima, A

Komatsu, M

机构：

[1] Kyushu Inst Technol, Ctr Microelect Syst, Iizuka, Fukuoka 8208502, Japan

[2] Catalysis & Chem Ind Co Ltd, Fine Chem Res Ctr, Kitakyushu, Fukuoka 8080027, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 7A期

关键词：

low-dielectric-constant material; spin-on-glass; plasma; HMDS;

D O I：

10.1143/JJAP.39.3919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, the dehydration behavior of hydrogen-methyl-siloxane-based porous spin-on-glass (SOG) films after oxygen plasma exposure is reported. The resultant loss of hydrophohic groups from the plasma exposure makes the films hygroscopic and thus the film dielectric constant can significantly increase. We employed a simple method consisting of spin-on coating of hexadimethyldisilazane (HMDS) with successive hotplate baking so as to dehydrate the films and decrease the film dielectric constant.

引用

页码：3919 / 3923

页数：5

共 21 条

[1] Materials issues with thin film hydrogen silsesquioxane low K dielectrics [J].

Albrecht, MG ;

Blanchette, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (11) :4019-4025

[2] Novel porous films having low dielectric constants synthesized by liquid phase silylation of spin-on glass sol for intermetal dielectrics [J].

Aoi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B) :1355-1359

[3]

BOEHM HP, 1966, ADV CATAL, V16, P176

[4] Effects of hydrogen on electrical and chemical properties of low-k hydrogen silsesquioxane as an intermetal dielectric for nonetchback processes [J].

Chang, TC ;

Liu, PT ;

Shih, FY ;

Sze, SM .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (08) :390-392

[5] The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment [J].

Chang, TC ;

Liu, PT ;

Mor, YS ;

Sze, SM ;

Yang, YL ;

Feng, MS ;

Pan, FM ;

Dai, BT ;

Chang, CY .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (10) :3802-3806

[6] Fluorinated amorphous carbon as a low-dielectric constant interlayer dielectric [J].

Endo, K .

MRS BULLETIN, 1997, 22 (10) :55-58

[7] Novel low k dielectrics based on diamondlike carbon materials [J].

Grill, A ;

Patel, V ;

Jahnes, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (05) :1649-1653

[8] Organic and inorganic spin-on polymers for low-dielectric-constant applications [J].

Hacker, NP .

MRS BULLETIN, 1997, 22 (10) :33-38

[9] Low k, porous methyl silsesquioxane and spin-on-glass [J].

Kohl, AT ;

Mimna, R ;

Shick, R ;

Rhodes, L ;

Wang, ZL ;

Kohl, PA .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (02) :77-79

[10]

Kondoh E, 1998, ELECTROCHEM SOLID ST, V1, P224, DOI 10.1149/1.1390693

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